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Data Sheet
? Electrical characteristics (Ta = 25 ? C)
Parameter
Gate-source leakage
Symbol
I GSS
Min.
-
Typ.
-
Max.
? 100
Unit
nA
Conditions
V GS = ? 30V, V DS =0V
Drain-source breakdown voltage V (BR)DSS
250
-
-
V
I D =1mA, V GS =0V
Zero gate voltage drain current
Gate threshold voltage
I DSS
V GS (th)
-
3.5
-
-
10
5.5
? A
V
V DS =250V, V GS =0V
V DS =10V, I D =1mA
Static drain-source on-state
resistance
R DS (on) *
-
780
1000
m ? I D =2A, V GS =10V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
l Y fs l *
C iss
C oss
C rss
t d(on) *
t r *
t d(off) *
1.2
-
-
-
-
-
-
-
410
30
15
17
15
20
-
-
-
-
-
-
-
S
pF
pF
pF
ns
ns
ns
V DS =10V, I D =2A
V DS =25V
V GS =0V
f=1MHz
V DD 125V, I D =2A
V GS =10V
R L =62.5 ?
Fall time
t f
*
-
12
-
ns
R G =10 ?
Total gate charge
Gate-source charge
Gate-drain charge
Q g *
Q gs *
Q gd *
-
-
-
9.0
3.5
3.5
-
-
-
nC
nC
nC
V DD 125V, I D =4A
V GS =10V
R L =31.25 ? , R G =10 ?
*Pulsed
? Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol
V SD *
Min.
-
Typ.
-
Max.
1.5
Unit
V
Conditions
I s =4A, V GS =0V
*Pulsed
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? 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.11 - Rev.A
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